Program

The ICNN2018 program is now available. The abstract book will be made available to conference attendees soon. Program Download

International Conference on Nano-photonics and Nano-optoelectronics 2018(ICNN2018)

Program

April 25 Wed.

ICNN1: Nano Devices
Chair: J.J. Finley(Technical University of Munich, Germany)

Room 414 + 415

Start End Session No. Title Speaker Description
13:30 13:45 WELCOME
ADDRESS		 Yasuhiko Arakawa
The University of Tokyo, Japan
13:45 14:15 ICNN1-1
Invited		 Application of Photonic Trumpets to Hybrid Optomechanics and Quantum Sensing Jean-Michel Gerard
CEA/ INAC Grenoble, France		 Free standing GaAs wires are both photonic wires and mechanical resonators. I will review appealing novel opportunities generated by the giant optomechanical coupling between exciton states and vibrations for QDs embedded in a photonic trumpet.
14:15 14:30 ICNN1-2 Transfer-printed Quantum-dot Single Photon Sources for Efficient Waveguide Coupling Ryota Katsumi1, Yasutomo Ota2, Masahiro Kakuda2, Satoshi Iwamoto1,2, Yasuhiko Arakawa1,2
1IIS, Japan,
2NanoQuine, Japan		 We designed single photon source structure supporting near-unity waveguide coupling, which is robust against position misalignments accompanied by transfer-printing-based integration approach. Experimentally, we observed single photon generation from a transfer-printed quantum-dot single photon sources.
14:30 14:45 ICNN1-3 Engineering the Photoresponse of InAs Nanowires Jack Alexander-Webber
Department of Engineering, University of Cambridge, UK		 We exploit the sensitivity of InAs nanowires to surface states, through controlled growth conditions and surface passivation treatments, to develop optoelectronic devices with a highly tunable photoresponse.
14:45 15:00 ICNN1-4 GeSn/Ge Dual-Nanowire Grown by Molecular Beam Epitaxy for Light Source on Si Yuxin Song
Shanghai Institute of Microsys, China		 GeSn/Ge dual nanowire is demonstrated by MBE. The strain field analyzed by Raman and FEM shows that the compressive strain in GeSn is effectively relaxed, beneficial for direct bandgap conversion, potential for Si-based light source.
15:00 15:30 Break

ICNN2: Quantum Dots and Nanowires
Chair: J. P. Reithmaier(University of Kassel, Germany)

Room 414 + 415

Start End Session No. Title Speaker Description
15:30 16:00 ICNN2-1
Invited		 Semiconductor Quantum Dots and 2D Materials for Nanophotonics C. Schneider1, C. P. Dietrich1, S. Klembt1, L. Dusanowski1, M. Dusanowski1, S. Höfling1,2
1University of Würzburg, Würzburg, Germany,
2University of St Andrews, St Andrews, UK		 see abstract book
16:00 16:15 ICNN2-2 Evaluation of Inter-Sublevel Transition of InAs/GaAs Quantum Dot Structures on On-Axis Si (100) Substrate by Photocurrent Measurement Hirofumi Yoshikawa1,2,3, Jinkwan Kwoen1, Takahiro Doe1,3, Makoto Izumi3, Satoshi Iwamoto1,2, Yasuhiko Arakawa1,2
1Institute for Nano Quantum Information Electronics, University of Tokyo, Japan,
2Institute of Industrial Science, University of Tokyo, Japan,
3Corporate Research and Development BU, SHARP Corporation, Japan		 We report the evaluation of inter-sublevel transition of InAs/GaAs quantum dot structures directly grown on on-axis Si (100) substrate by photocurrent measurement.
16:15 16:30 ICNN2-3 Far Infrared Intersubband Photodetectors Based on Quantum Disc in Nanowire Arrays with Photoresponse to Normal Incidence Radiation Mohammad Karimi1,2
1Solid State Physics and NanoLund, Lund University, Sweden,
2Halmstad University, Sweden		 Abstract attached
16:30 16:45 ICNN2-4 One-Dimensional Electronic States in Closely Stacked InAs/GaAs Quantum Dots with Different Growth Temperatures Toshiyuki Kaizu, Kazuki Hirao, Takashi Kita
Kobe University, Japan		 We achieved the emission wavelength tuning of the closely stacked InAs/GaAs quantum dots by varying the growth temperature and demonstrated their one-dimensional miniband formation from the polarization anisotropy and PL decay lifetime obeying T0.5 dependence.
16:45 17:00 ICNN2-5 Strain Analysis of InPBi Quantum Dots Liyao Zhang
University of Shanghai for Science and Technology, China		 InPBi thin film crystal was first realized in 2013. The photoluminescence of InPBi is strong and broad at room temperature. The strain effects on the optical properties of InPBi QDs are discussed through FEM simulation.
April 26 Thu.

ICNN3: Quantum Optics & Plasmonics
Chair: C. Chang-Hasnain(University of California, Berkeley, USA)

Room 414 + 415

Start End Session No. Title Speaker Description
9:00 9:30 ICNN3-1
Invited		 Degenerate Optical Parametric Oscillators for Solving Ising Model Hiroki Takesue
NTT Basic Research Laboratories, NTT Corporation, Japan		 I describe our effort to generate thousands of time-multiplexed degenerate optical parametric oscillators for a coherent Ising machine, using kilometers-long fiber cavities and the telecommunications-band phase sensitive amplifiers.
9:30 9:45 ICNN3-2 Spin-Glass Problem Solved with Coupled Plasmon Particle System Toshiharu Saiki, Yusuke Hirukawa
Keio University, Japan		 We proposed an idea to implement an algorithm for Ising spin glass problem to coupled plasmon particles interacting with a phase-change material to modify the dipole-dipole interaction autonomously so as to reach the solution efficiently.
9:45 10;00 ICNN3-3 Enhanced Optical Absorption of Graphene Monolayer with Attenuated Total-Reflection Configuration in the Visible Range Gaige Zheng1, Linhua Xu1, Jicheng Wang2, Min Lai1
1Nanjing University of Information Science & Technology, China,
2Jiangnan University, China		 We propose novel possible operation principle for graphene-based absorber through the resonant coupling of the external electromagnetic radiation in an attenuated total-reflection structure.
10:00 10:15 ICNN3-4 Surface Plasmon Polariton Generation in Carbon Nanotube Sergey Moiseev, Aleksei Kadochkin, Yuliya Dadoenkova, Igor Zolotovskii
Ulyanovsk State University, Russia		 We have shown the possibility of far infrared surface plasmon polariton generation in a single-walled CNT. In such generator the amplification is created by drift currents, and the feedback is realized due to periodically profiled
10:15 10:30 ICNN3-5 Coherent Absorption At Interfaces for Film Thickness Measurement to Plasmonic Selective Excitation Fei He1, Kevin Macdonald2, Xu Fang1
1Department of Electronics and Computer Science, University of Southampton, UK,
2Optoelectronics Research Centre and Centre for Photonic Metamaterials, University of Southampton, UK		 We demonstrate using two coherent light beams to measure the thickness of absorptive thin films and selectively excite plasmonic resonances at the surface of transparent bulk substrates.
10:30 11:00 Break

ICNN4: Nanolasers and Photonic Devices
Chair: M. Takenaka(The University of Tokyo, Japan)

Room 414 + 415

Start End Session No. Title Speaker Description
11:00 11:30 ICNN4-1
Invited		 TBA Connie Chang-Hasnain
University of California, Berkeley, USA		 see abstract book
11:30 11:45 ICNN4-2 Quantum-Dot Nanolaser Integrated on a Silicon Waveguide Buried in Silicon Dioxide by Transfer Printing Alto Osada1, Yasutomo Ota1, Ryota Katsumi2, Katsuyuki Watanabe1, Satoshi Iwamoto1,2, Yasuhiko Arakawa1,2
1Institute for Nano Quantum Information Electronics, The University of Tokyo, Japan,
2Institute of Industrial Science, The University of Tokyo, Japan		 We report the hybrid integration of a quantum dot nanolaser on silicon photonic circuits using transfer printing. The pick-and-place assembly method facilitates the integration of a nanolaser on a single CMOS-processed silicon waveguide.
11:45 12:00 ICNN4-3 Observation of Anomalous Er Emission in a Er,O-codoped GaAs-based Two Dimensional Photonic Crystal Nanocavity Natsuki Fujioka, Masayuki Ogawa, Taiki Kishina, Ryoma Higashi, Masahiko Kondow, Jun Tatebayashi, Yasufumi Fujiwara
Graduate School of Engineering, Osaka University, Japan		 We report on the fabrication of a GaAs:Er,O-based two-dimensional PhC nanocavity and the observation of characteristic behavior of Er emission from the nanocavity.
12:00 13:00 Lunch Break

ICNN6: Silicon Photonics
Chair: R. Taylor(University of Oxford, UK)

Room 414 + 415

Start End Session No. Title Speaker Description
14:30 15:00 ICNN6-1
Invited		 Efficient Phase Modulation based on Si Hybrid MOS Capacitor for Universal Photonic Integrated Circuits Mitsuru Takenaka, Shinichi Takagi
The University of Tokyo, Japan		 Owing to the large electron-induced refractive index change in InGaAsP, we have successfully demonstrated efficient, low-loss, and low-power optical phase modulation by using the Si hybrid MOS capacitor, suitable for large-scale universal PICs.
15:00 15:15 ICNN6-2 Membrane Buried Heterostrucutre Lasers Integrated on Silicon Nanowire Waveguide Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Koichi Hasebe, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo
NTT Device Technology Laboratories, NTT Corporation, Japan		 We present a 2-mm-long lateral current-injection membrane buried heterostructure laser on a 200-nm-thick Si waveguide. The maximum output power emitted from the Si waveguide is 36 mW.
15:15 15:30 ICNN6-3 Linear-Spectral Mach-Zehnder Interferometer with Fano-Resonant Graded-Stub Filters Based on Pillar Photonic Crystal Waveguides Masatoshi Tokushima
Photonics Electronics Technology Research Association (PETRA), Japan		 We proposed a linear-spectral Mach-Zehnder interferometer with graded-stub filters based on pillar photonic crystal waveguides that can output the transmitted light from ports other than the input one.
15:30 15:45 ICNN6-4 Nonlinear Al-Si-Al Plasmonic Waveguide and Its Application to A Photodetector Hidetaka Nishi, Tai Tsuchizawa, Maasaki Ono, Masaya Notomi, Hiroshi Fukuda, Shinji Matsuo
NTT, Japan		 We report on observation of two-photon absorption within an Al-Si-Al plasmonic waveguide. By utilizing internal photoemission at the Al-Si boundary and nonlinear carrier generation, we applied it to a photodetector for over 45-Gbit/s data reception.
15:45 16:00 Break

ICNN7: Quantum Dots and Lasers
Chair: M. Holmes(The University of Tokyo, Japan)

Room 414 + 415

Start End Session No. Title Speaker Description
16:00 16:30 ICNN7-1
Invited		 Integration of III-V Nanowire Lasers on Silicon: Physics and Materials Aspects Jonathan James Finley
Technical University of Munich, Germany		 see abstract book
16:30 17:00 ICNN7-2
Invited		 Temperature Insensitive Quantum Dot Lasers and Optical Amplifiers Johann Peter Reithmaier1, Gadi Eisenstein2
1University of Kassel, Germany,
2Technion-Isarel, Institute of Technology, Haifa, Israel		 A review is given on the application of improved QD gain material with low temperature sensitivity for high-speed lasers and semiconductor optical amplifiers (SOAs) working in the 1.5 um wavelength range.
17:00 17:15 ICNN7-3 Room-Temperature Continuous-Wave Operation of InAs/GaAs Quantum Dot Lasers on On-Axis Si (001) Just Substrate Jinkwan Kwoen1, Bongyong Jang1, Takeo Kageyama1, Katsuyuki Watanabe2, Yasuhiko Arakawa1,2
1NanoQunie, The University of Tokyo, Japan,
2IIS, The University of Tokyo, Japan		 We report the room temperature ‘continuous-wave’ operation of InAs / GaAs quantum dot lasers directly grown on Si (001) just substrate by miniaturizing the laser structure.
17:15 17:30 ICNN7-4 Amplified Spontaneous Emission and Lasing from Cesium Lead Halide Perovskite Nanocubes Zhengzheng Liu1, Zhiping Hu2, Tongchao Shi1, Zeyu Zhang1, Xin Xing1, Xiaosheng Tang2, Juan Du1, Yuxin Leng1
1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, China,
2Chongqing University, China		 We report tunable amplified spontaneous emission and low-threshold lasing from cesium lead halide perovskite CsPbX3 (X=Br/I/Cl) nanocubes with high quality and enhanced stability by facile low-temperature, solution-processed method.
April 27 Fri.

ICNN8: Photonic Crystals
Chair: C. Schuck(University of Munster, Germany)

Room 414 + 415

Start End Session No. Title Speaker Description
9:00 9:30 ICNN8-1
Invited		 Gan-On-Si Photonic Crystal Cavities Nicolas Grandjean
École polytechnique fédérale de Lausanne, Switzerland		 see abstract book
9:30 9:45 ICNN8-2 Machine Learning of The Relationship Between Q-Factors and Structures of Nanocavities TAKASHI ASANO, SUSUMU NODA
Kyoto University, Japan		 We report on the results of machine learning of the relationship between the Q factors and structures of nanocavities using a convolutional neural network, which is aimed at developing more efficient optimization method.
9:45 10:00 ICNN8-3 Analysis on Giant Light Scattering near a Dirac Point in a Photonic Crystal Yasutomo Ota1, Satoshi Iwamoto1,2, Yasuhiko Arakawa1,2
1Nanoquine, Japan,
2IIS, Japan		 We analyze light scattering near a Dirac point in a 2D photonic crystal by electromagnetic simulations. We demonstrate giant light scattering by a tiny cavity embedded in the photonic crystal around the Dirac point frequency.
10:00 10:15 ICNN8-4 Three-Dimensional Photonic Crystal Nanocavity Fabricated by A Micro-Manipulation Technique Under Optical Microscope Observation Takeshi Ishida1, Shun Takahashi1,2, Takeyoshi Tajiri1, Katsuyuki Watanabe1, Yasutomo Ota1, Satoshi Iwamoto1, Yasuhiko Arakawa1
1The University of Tokyo, Japan,
2Kyoto Institute of Technology, Japan		 We fabricated a three-dimensional photonic crystal nanocavity by a micro-manipulation technique under optical microscope observation. The fabrication error was comparable to the previous technique under SEM observation where the electron beam damaged the nanocavity.
10:15 10:30 ICNN8-5 Engineering Photoluminescence Characteristics of Nano-Phosphor Using Photonic Structure Arvind Kumar Gathania1, Shashi Thakur1, Naresh Dhiman2, Kirtpreet Singh1
1National Instt. of Technology, India,
2Indian Instt. of Info. Techn., India		 YVO4:Eu3+ inverse opal is prepared by using polymythylmethacrylate template and its photonic stop band (PSB) appear at 500nm. We notice that the PL emission intensity of opal near the PSB is enhanced significantly
10:30 11:00 Break

ICNN9: Quantum Optics and Photonics
Chair: N. Grandjean(École polytechnique fédérale de Lausanne, Switzerland)

Room 414 + 415

Start End Session No. Title Speaker Description
11:00 11:30 ICNN9-1
Invited		 Integrated Quantum Photonics on Silicon Chips Carsten Schuck1,2
1Physics Institute, University of Munster, Germany,
2Center for NanoTechnology (CeNTech), Munster, Germany 		We present the integration of quantum light sources, nano-photonic circuit components and superconducting nanowire single-photon detectors with optical waveguides on silicon chips for realizing scalable photonic quantum technology at telecommunication wavelengths.
11:30 11:45 ICNN9-2 Fabrication Tolerant Polarization Beam Splitter with Easy Calibration Nicolas Abadia1,3, Md Ghulam Saber1, Qiaoyin Lu2, Wei-Hua Guo2, David V. Plant1, John F. Donegan3
1McGill Univeristy, Canada,
2Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China,
3Trinity College Dublin, Ireland		 In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. The experimental results show that an extinction ratio better than 15 dB and an on-chip loss of
11:45 12:00 ICNN9-3 Tunable Plasmonic Probe for Tip-enhanced Near-field Optical Microscopy Mingqian Zhang
Qian Xuesen Laboratory of Space Technology, China		 A tunable plasmonic probe for tip-enhanced near-field optical microscopy is suggested. It consists of two sharp tips and an array of nanostructures. This device allows polarization-controlled tunable plasmonic directing and nano-focusing of the incident light.
12:00 13:30 Lunch Break

ICNN10: III-Nitride Quantum Dots
Chair: S. Matuso(NTT, Japan)

Room 414 + 415

Start End Session No. Title Speaker Description
13:30 14:00 ICNN10-1
Invited		 Non-polar Nitride Single Photon Sources R. A. Taylor1, C. C. Kocher1, T. J. Puchtler1, J. C. Jarman2, T. Zhu2, T. Wang1, L. Nuttall1, R. A. Oliver2
1University of Oxford, UK,
2University of Cambridge, UK		 Measurements of single photon emission from non-polar InGaN single quantum dots pumped both optically and electrically will be presented. The dots emit at temperatures up to 220K. Electroluminescent emission with a g2 of 0.18 will be discussed.
14:00 14:15 ICNN10-2 Formation of GaN/AlN Quantum Dots Frank Bertram, Hannes Schuermann, Gordon Schmidt, Peter Veit, Juergen Christen, Andre Stittmatter, Armin Dadgar, Christoph Berger
University of Magdeburg, Germany		 A systematic series of GaN/AlN quantum dot samples with varying growth interruption time after GaN deposition have been investigated by means of STEM as well as CL spectroscopy at low temperatures.
14:15 14:30 ICNN10-3 Ultra-Bright, Ultra-Pure Single Photons from InGaN Quantum Dots Embedded in Porous Micropillars Helen Springbett1, Kang Gao2, Tongtong Zhu1, Mark Holmes2, Yasuhiko Arakawa2, Rachel Oliver1
1University of Cambridge, UK,
2The University of Tokyo, Japan		 We present blue single photon emission from a self-assembled InGaN/GaN quantum dot with a uncorrected g(2)(0) value of ~0.12, achieved through enhancement by a meosporous distributed Bragg reflector micropillars and optimization of excitation conditions.
14:30 14:45 ICNN10-4 Investigation of The Fast Time Scale of The Spectral Diffusion in An Ingan Quantum Dot Kang Gao1, Helen Springbett2, Tongtong Zhu2, Rachel Oliver2, Mark Holmes1,3, Yasuhiko Arakawa1,3
1Institute of Industrial Science, University of Tokyo, Japan,
2University of Cambridge, UK,
3NanoQuine, University of Tokyo, Japan		 We present a study on the spectral diffusion time-scale from an InGaN QD via photon autocorrelation measurements, to investigate the spectral diffusion phenomena and compare with previous nanosecond scale spectral diffusion results from GaN QDs.
14:45 15:15 Break

ICNN11: Solar Cells & Fundamentals
Chair: S. Matuso(NTT, Japan)

Room 414 + 415

Start End Session No. Title Speaker Description
15:15 15:30 ICNN11-1 Enhancement of Power Conversion Efficiency of Silicon Photovoltaic Cell Employing Arrays of Poly(Methyl Methacrylate-Co-Acrylic Acid) Nanospheres Embedded with Metallic Nanoparticles Chee-Leong Lee1, Swee-Yong Chee2, Wee-Sheng Goh2, Lai-Kuan Yik2
1Wawasao Open University, Malaysia,
2University of Tunku Abdul Rahman, Malaysia		 We demonstrate a novel light trapping approach using arrays of poly(methyl methacrylate-co-acrylic acid) nanospheres embedded with metallic nanoparticles with the relative enhancement of the power conversion efficiency of 179% if compared to the uncoated sample.
15:30 15:45 ICNN11-2 Polarization Dependent Photocurrent in InAs/GaAs Quantum Dot Superlattice Solar Cells Yukihiro Harada, Junya Yamada, Daiki Watanabe, Shigeo Asahi, Takashi Kita
Kobe University, Japan		 We studied the polarization dependent two-step photocurrent in InAs/GaAs quantum dot superlattice solar cells. The observed photocurrent demonstrates the polarization dependence of the intraband transition induced by the mixing between the conduction and valence bands.
15:45 16:00 ICNN11-3 Extraction Efficiency of Up-Converted Electrons in Two-Step Photon Up-Conversion Solar Cells Shigeo Asahi, Kenta Nishimura, Toshiyuki Kaizu, Takashi Kita
Kobe University, Japan		 Our newly proposing two-step photon up-conversion solar cell (TPU-SC) utilizes the two-step up-conversion phenomenon, which comprises wide gap semiconductor (WGS) and narrow gap semiconductor (NGS).
16:00 16:15 ICNN11-4 Saturation of Two-Photon Absorption in Layered Transition Metal Dichalcogenides: Experiment and Theory Ningning Dong1, Yuanxin Li1, Saifeng Zhang1, Niall McEvoy2, Riley Gatensby2, Georg S. Duesberg2, Jun Wang1
1Chinese Academy of Sciences, China,
2Trinity College Dublin, Ireland		 The saturation of two-photon absorption (TPA) in four types of layered transition metal dichalcogenides (TMDCs) (MoS2, WS2, MoSe2, WSe2) was systemically studied both experimentally and theoretically.
16:15 16:30 ICNN11-5 Enhanced Laser-Damage Threshold and Nonlinear Optical Performances of Layered MoS2 Nanofilms Through Generation of MoO3 and Sulfur Vacancies Xiaoyan Zhang1, Yafeng Xie1, Jiawei Huang1, Saifeng Zhang1, Jun Wang1,2
1Shanghai Institute of Optics and Fine Mechanics (SIOM) Chinese Academy of Sciences, China,
2State Key Laboratory of High Field Laser Physics Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences, China		 Layered MoS2 nanofilms with improved laser-damage threshold and tunable nonlinear optical performances for femtosecond laser pulses were fabricated via polyelectrolyte assisted solvothermal method.
16:30 16:45 CLOSING Yasuhiko Arakawa
The University of Tokyo, Japan
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